Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SIS496EDNT-T1-GE3
BESCHREIBUNG
MOSFET N-CH 30V 50A PPAK1212-8
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 50A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
Vishay Siliconix
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1515 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SIS496

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIS496EDNT-T1-GE3

Dokumente und Medien

Datasheets
1(SIS496EDNT)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
HTML Datasheet
1(SIS496EDNT)

Menge Preis

-

Stellvertreter

Teil Nr. : SISA72DN-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
Einzelpreis. : $0.90000
Ersatztyp. : Similar