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ChinaBSS192PH6327XTSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSS192PH6327XTSA1
BESCHREIBUNG
MOSFET P-CH 250V 190MA SOT89
DETAILIERTE BESCHREIBUNG
P-Channel 250 V 190mA (Ta) 1W (Ta) Surface Mount PG-SOT89
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS™
Package
Tape & Reel (TR)
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.8V, 10V
Rds On (Max) @ Id, Vgs
12Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id
2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs
6.1 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
104 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT89
Package / Case
TO-243AA
Base Product Number
BSS192
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSS192PH6327XTSA1
Dokumente und Medien
Datasheets
1(BSS192P)
Other Related Documents
1(Part Number Guide)
Environmental Information
1(RoHS Certificate)
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(BSS192P)
Simulation Models
1(OptiMOS™ Power MOSFET 250V P-Channel Spice Model)
Menge Preis
-
Stellvertreter
Teil Nr. : BSS192PH6327FTSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 22,503
Einzelpreis. : $0.62000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 22,503
Einzelpreis. : $0.62000
Ersatztyp. : Parametric Equivalent