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ChinaJAN2N5796A
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
JAN2N5796A
BESCHREIBUNG
NPN TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 600mW Through Hole TO-78-6
HERSTELLER
Microchip Technology
STANDARD LEADTIME
30 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Transistor Type
2 PNP (Dual)
Current - Collector (Ic) (Max)
600mA
Voltage - Collector Emitter Breakdown (Max)
60V
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
600mW
Frequency - Transition
-
Operating Temperature
-65°C ~ 175°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/496
Mounting Type
Through Hole
Package / Case
TO-78-6 Metal Can
Supplier Device Package
TO-78-6
Base Product Number
2N5796
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Microchip Technology JAN2N5796A
Dokumente und Medien
Environmental Information
()
PCN Assembly/Origin
1(Manufacturing Change 23/Feb/2021)
Menge Preis
QUANTITÄT: 50
Einzelpreis: $105.1208
Verpackung: Bulk
MinMultiplikator: 50
Verpackung: Bulk
MinMultiplikator: 50
Stellvertreter
-