Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
GB10SLT12-252
BESCHREIBUNG
DIODE SIL CARB 1.2KV 10A TO252
DETAILIERTE BESCHREIBUNG
Diode 1200 V 10A Surface Mount TO-252
HERSTELLER
GeneSiC Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500

Technische Daten

Mfr
GeneSiC Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
2 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
250 µA @ 1200 V
Capacitance @ Vr, F
520pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
TO-252
Operating Temperature - Junction
-55°C ~ 175°C
Base Product Number
GB10SLT12

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080

Andere Namen

1242-1140
GB10SLT12252

Kategorie

/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/GeneSiC Semiconductor GB10SLT12-252

Dokumente und Medien

Datasheets
1(GB10SLT12-252 Datasheet)
Featured Product
1(Silicon Carbide Schottky Diode)
PCN Obsolescence/ EOL
1(OBS 14/Jun/2023)

Menge Preis

-

Stellvertreter

Teil Nr. : GD10MPS12E
Hersteller. : GeneSiC Semiconductor
Verfügbare Menge. : 2,656
Einzelpreis. : $3.58000
Ersatztyp. : MFR Recommended
Teil Nr. : C4D02120E
Hersteller. : Wolfspeed, Inc.
Verfügbare Menge. : 20,013
Einzelpreis. : $3.65000
Ersatztyp. : Similar