Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
RJK6024DPD-00#J2
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 400mA (Ta) 27.2W (Tc) Surface Mount MP-3A
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
214

Technische Daten

Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
42Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
4.3 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
37.5 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
27.2W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MP-3A
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63

Umweltverträgliche Exportklassifikationen

RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000

Andere Namen

2156-RJK6024DPD-00#J2
RENRNSRJK6024DPD-00#J2

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK6024DPD-00#J2

Dokumente und Medien

Datasheets
1(Datasheet)

Menge Preis

QUANTITÄT: 214
Einzelpreis: $1.4
Verpackung: Bulk
MinMultiplikator: 214

Stellvertreter

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