Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
TSM680P06CI C0G
BESCHREIBUNG
MOSFET P-CH 60V 18A ITO220
DETAILIERTE BESCHREIBUNG
P-Channel 60 V 18A (Tc) 17W (Tc) Through Hole ITO-220
HERSTELLER
Taiwan Semiconductor Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1

Technische Daten

Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
68mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
17W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ITO-220
Package / Case
TO-220-3 Full Pack, Isolated Tab

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM680P06CI C0G

Dokumente und Medien

Datasheets
1(TSM680P06Cx (C0G, C5G, R0G))
Environmental Information
()

Menge Preis

-

Stellvertreter

Teil Nr. : FQPF27P06
Hersteller. : onsemi
Verfügbare Menge. : 0
Einzelpreis. : $2.03000
Ersatztyp. : Similar