English
Spain
Rusia
Italy
ChinaDF23MR12W1M1B11BOMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
DF23MR12W1M1B11BOMA1
BESCHREIBUNG
SIC 2N-CH 1200V AG-EASY1BM-2
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 25A Chassis Mount AG-EASY1BM-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
24
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Obsolete
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
25A
Rds On (Max) @ Id, Vgs
45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id
5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
620nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 800V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-EASY1BM-2
Base Product Number
DF23MR12
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
SP001602244
IFEINFDF23MR12W1M1B11BOMA1
2156-DF23MR12W1M1B11BOMA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies DF23MR12W1M1B11BOMA1
Dokumente und Medien
Datasheets
1(DF23MR12W1M1_B11)
HTML Datasheet
1(DF23MR12W1M1_B11)
Menge Preis
-
Stellvertreter
Teil Nr. : DF23MR12W1M1B11BPSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 12
Einzelpreis. : $85.23000
Ersatztyp. : Direct
Verfügbare Menge. : 12
Einzelpreis. : $85.23000
Ersatztyp. : Direct