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TEILNUMMER DES HERSTELLERS
2SD2257,Q(J
BESCHREIBUNG
TRANS NPN 100V 3A TO220NIS
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 100 V 3 A 2 W Through Hole TO-220NIS
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.5mA, 1.5A
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 2A, 2V
Power - Max
2 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS
Base Product Number
2SD2257
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2SD2257Q(J
2SD2257QJ
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SD2257,Q(J
Dokumente und Medien
Datasheets
1(2SD2257)
HTML Datasheet
1(2SD2257)
Menge Preis
-
Stellvertreter
Teil Nr. : TTD1415B,S4X(S
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar