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ChinaIRFHS8342TR2PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFHS8342TR2PBF
BESCHREIBUNG
MOSFET N-CH 30V 8.8A PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 8.8A (Ta), 19A (Tc) Surface Mount PG-TSDSON-6
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
400
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8.8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs
16mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 25 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
PG-TSDSON-6
Package / Case
6-PowerVDFN
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRFHS8342TR2PBFCT
IRFHS8342TR2PBFDKR
IRFHS8342TR2PBFTR
SP001575842
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFHS8342TR2PBF
Dokumente und Medien
Datasheets
1(IRFHS8342PBF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFHS8342PBF)
Simulation Models
1(IRFHS8342TR2PBF Saber Model)
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