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ChinaSPB02N60C3ATMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SPB02N60C3ATMA1
BESCHREIBUNG
MOSFET N-CH 650V 1.8A TO263-3
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 1.8A (Tc) 25W (Tc) Surface Mount PG-TO263-3-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs
12.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SPB02N
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SPB02N60C3
SPB02N60C3ATMA1TR
SPB02N60C3XT
SPB02N60C3XT-ND
2156-SPB02N60C3ATMA1
IFEINFSPB02N60C3ATMA1
SPB02N60C3INTR-ND
SPB02N60C3INCT-ND
SPB02N60C3ATMA1CT
SPB02N60C3INCT
SPB02N60C3INTR
SP000013516
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPB02N60C3ATMA1
Dokumente und Medien
Datasheets
1(SPB02N60C3)
Other Related Documents
1(Part Number Guide)
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HTML Datasheet
1(SPB02N60C3)
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