Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRF614
BESCHREIBUNG
MOSFET N-CH 250V 2.7A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 250 V 2.7A (Tc) 36W (Tc) Through Hole TO-220AB
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
IRF614 Models
STANDARDPAKET
1,000

Technische Daten

Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
36W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
IRF614

Umweltverträgliche Exportklassifikationen

RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRF614

Dokumente und Medien

Datasheets
()
EDA Models
1(IRF614 Models)

Menge Preis

-

Stellvertreter

Teil Nr. : IRF614PBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
Einzelpreis. : $0.67221
Ersatztyp. : Direct