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ChinaSI7925DN-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI7925DN-T1-GE3
BESCHREIBUNG
MOSFET 2P-CH 12V 4.8A PPAK 1212
DETAILIERTE BESCHREIBUNG
Mosfet Array 12V 4.8A 1.3W Surface Mount PowerPAK® 1212-8 Dual
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
4.8A
Rds On (Max) @ Id, Vgs
42mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
1.3W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Supplier Device Package
PowerPAK® 1212-8 Dual
Base Product Number
SI7925
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SI7925DN-T1-GE3
Dokumente und Medien
Datasheets
1(SI7925DN)
HTML Datasheet
1(SI7925DN)
Menge Preis
-
Stellvertreter
Teil Nr. : SI7913DN-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 1,751
Einzelpreis. : $1.58000
Ersatztyp. : Direct
Verfügbare Menge. : 1,751
Einzelpreis. : $1.58000
Ersatztyp. : Direct