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China2SK3318
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SK3318
BESCHREIBUNG
MOSFET N-CH 600V 15A TOP-3F-A1
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 15A (Tc) 3W (Ta), 100W (Tc) Through Hole TOP-3F-A1
HERSTELLER
Panasonic Electronic Components
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Panasonic Electronic Components
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
460mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3500 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 100W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TOP-3F-A1
Package / Case
TOP-3F
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Panasonic Electronic Components 2SK3318
Dokumente und Medien
Datasheets
1(2SK3318)
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1(Wearables Technology Components)
HTML Datasheet
1(2SK3318)
Menge Preis
-
Stellvertreter
Teil Nr. : RJK6014DPK-00#T0
Hersteller. : Renesas Electronics Corporation
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.00000
Ersatztyp. : Similar