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ChinaMIEB101H1200EH
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MIEB101H1200EH
BESCHREIBUNG
IGBT MODULE 1200V 183A 630W E3
DETAILIERTE BESCHREIBUNG
IGBT Module Full Bridge Inverter 1200 V 183 A 630 W Chassis Mount E3
HERSTELLER
IXYS
STANDARD LEADTIME
27 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
-
Package
Box
Product Status
Active
IGBT Type
-
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
183 A
Power - Max
630 W
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 100A
Current - Collector Cutoff (Max)
300 µA
Input Capacitance (Cies) @ Vce
7.43 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 125°C (TJ)
Mounting Type
Chassis Mount
Package / Case
E3
Supplier Device Package
E3
Base Product Number
MIEB101
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/IXYS MIEB101H1200EH
Dokumente und Medien
Datasheets
1(MIEB101H1200EH)
Environmental Information
1(Ixys IC REACH)
PCN Packaging
1(Change of label 01/Jul/2023)
HTML Datasheet
1(MIEB101H1200EH)
Menge Preis
QUANTITÄT: 10
Einzelpreis: $127.971
Verpackung: Box
MinMultiplikator: 1
Verpackung: Box
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $138.25
Verpackung: Box
MinMultiplikator: 1
Verpackung: Box
MinMultiplikator: 1
Stellvertreter
-