Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
TPH3202LS
BESCHREIBUNG
GANFET N-CH 600V 9A 3PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 9A (Tc) 65W (Tc) Surface Mount 3-PQFN (8x8)
HERSTELLER
Transphorm
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
Transphorm
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
350mOhm @ 5.5A, 8V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.3 nC @ 4.5 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 480 V
FET Feature
-
Power Dissipation (Max)
65W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-PQFN (8x8)
Package / Case
3-PowerDFN

Umweltverträgliche Exportklassifikationen

Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Transphorm TPH3202LS

Dokumente und Medien

Datasheets
1(TPH3202L)
Product Training Modules
1(GaN versus Silicon Carbide (SiC) in Power Electronics Circuit Topologies)
Video File
()
PCN Obsolescence/ EOL
()
HTML Datasheet
1(TPH3202L)

Menge Preis

-

Stellvertreter

Teil Nr. : TP65H300G4LSG-TR
Hersteller. : Transphorm
Verfügbare Menge. : 6,582
Einzelpreis. : $3.59000
Ersatztyp. : Similar