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ChinaIXFN70N120SK
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXFN70N120SK
BESCHREIBUNG
SICFET N-CH 1200V 68A SOT227B
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 68A (Tc) Chassis Mount SOT-227B
HERSTELLER
IXYS
STANDARD LEADTIME
86 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id
4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
161 nC @ 20 V
Vgs (Max)
+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds
2790 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Base Product Number
IXFN70
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFN70N120SK
Dokumente und Medien
Datasheets
1(IXFN70N120SK)
Environmental Information
1(Ixys IC REACH)
Featured Product
1(SiC Power MOSFET and Diode Gate Drive Evaluation Board Kit)
HTML Datasheet
1(IXFN70N120SK)
Menge Preis
QUANTITÄT: 10
Einzelpreis: $117.596
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $127.04
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
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