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TEILNUMMER DES HERSTELLERS
HUF76629D3S
BESCHREIBUNG
MOSFET N-CH 100V 20A TO252AA
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 20A (Tc) 110W (Tc) Surface Mount TO-252AA
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
398
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
UltraFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Rds On (Max) @ Id, Vgs
52mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1285 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-HUF76629D3S-FS
FAIFSCHUF76629D3S
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUF76629D3S
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 398
Einzelpreis: $0.75
Verpackung: Tube
MinMultiplikator: 398
Verpackung: Tube
MinMultiplikator: 398
Stellvertreter
-