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ChinaBDV65B
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BDV65B
BESCHREIBUNG
TRANS NPN DARL 100V 10A SOT93
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN - Darlington 100 V 10 A 125 W Through Hole SOT-93
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
2V @ 20mA, 5A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A, 4V
Power - Max
125 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-218-3
Supplier Device Package
SOT-93
Base Product Number
BDV65
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi BDV65B
Dokumente und Medien
Datasheets
1(BDV64,65B)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(Multiple Devices 06/Oct/2006)
HTML Datasheet
1(BDV64,65B)
Menge Preis
-
Stellvertreter
-