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ChinaBSM180D12P3C007
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSM180D12P3C007
BESCHREIBUNG
SIC 2N-CH 1200V 180A MODULE
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 180A (Tc) 880W Surface Mount Module
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
17 Weeks
EDACAD-MODELL
BSM180D12P3C007 Models
STANDARDPAKET
12
Lagerbestände
Technische Daten
Mfr
Rohm Semiconductor
Series
-
Package
Bulk
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 10V
Power - Max
880W
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM180
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Rohm Semiconductor BSM180D12P3C007
Dokumente und Medien
Datasheets
()
Other Related Documents
1(SiCPMCtype Inner Structure)
Product Training Modules
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Video File
()
Environmental Information
()
Featured Product
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HTML Datasheet
1(BSM080D12P2C008)
EDA Models
1(BSM180D12P3C007 Models)
Simulation Models
1(BSM180D12P3C007 Spice Model)
Reliability Documents
1(SiC PM Reliability Test)
Menge Preis
QUANTITÄT: 12
Einzelpreis: $582.55083
Verpackung: Bulk
MinMultiplikator: 1
Verpackung: Bulk
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $605.31
Verpackung: Bulk
MinMultiplikator: 1
Verpackung: Bulk
MinMultiplikator: 1
Stellvertreter
-