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ChinaUPA2680T1E-E2-AT
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
UPA2680T1E-E2-AT
BESCHREIBUNG
MOSFET N-CH 20V 3A 6MLP
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 3A (Ta) Surface Mount 6-MLP (3x3)
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
508
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Rds On (Max) @ Id, Vgs
50mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
3.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
190 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Mounting Type
Surface Mount
Supplier Device Package
6-MLP (3x3)
Package / Case
6-VDFN Exposed Pad
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-UPA2680T1E-E2-AT
RENRNSUPA2680T1E-E2-AT
2156-UPA2680T1E-E2-AT-RETR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation UPA2680T1E-E2-AT
Dokumente und Medien
Datasheets
1(UPA2680T1E-E2-AT)
Menge Preis
QUANTITÄT: 508
Einzelpreis: $0.59
Verpackung: Bulk
MinMultiplikator: 508
Verpackung: Bulk
MinMultiplikator: 508
Stellvertreter
-