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ChinaSI4190DY-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI4190DY-T1-GE3
BESCHREIBUNG
MOSFET N-CH 100V 20A 8-SOIC
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 20A (Tc) Surface Mount 8-SOIC
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Rds On (Max) @ Id, Vgs
8.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 50 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4190
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI4190DYT1GE3
SI4190DY-T1-GE3TR
SI4190DY-T1-GE3DKR
SI4190DY-T1-GE3CT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI4190DY-T1-GE3
Dokumente und Medien
Datasheets
1(SI4190DY)
Featured Product
1(ThunderFETs)
PCN Obsolescence/ EOL
1(SIL-1072014 Rev0 17/Dec/2014)
PCN Assembly/Origin
1(Multiple Fabracation Changes09/Jul/2014)
HTML Datasheet
1(SI4190DY)
Menge Preis
-
Stellvertreter
-