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ChinaIRLH5036TR2PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRLH5036TR2PBF
BESCHREIBUNG
MOSFET N-CH 60V 100A 5X6 PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 20A (Ta), 100A (Tc) Surface Mount 8-PQFN (5x6)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
400
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs
4.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5360 pF @ 25 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerVDFN
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRLH5036TR2PBFCT
IRLH5036TR2PBFDKR
IRLH5036TR2PBFTR
SP001567268
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLH5036TR2PBF
Dokumente und Medien
Datasheets
1(IRLH5036PbF)
Other Related Documents
1(Part Number Guide)
Environmental Information
1(PQFN 5x6 RoHS Compliance)
Design Resources
1(IRLH5036TR2PBF Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRLH5036PbF)
Menge Preis
-
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