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ChinaFDD6670S
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDD6670S
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 64A (Ta) 1.3W (Ta) Surface Mount TO-252 (DPAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
307
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
64A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2010 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 150°C
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCFDD6670S
2156-FDD6670S
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDD6670S
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 307
Einzelpreis: $0.98
Verpackung: Bulk
MinMultiplikator: 307
Verpackung: Bulk
MinMultiplikator: 307
Stellvertreter
-