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ChinaRFP10P12
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TEILNUMMER DES HERSTELLERS
RFP10P12
BESCHREIBUNG
P-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
P-Channel 120 V 10A (Tc) 75W (Tc) Through Hole TO-220
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
300
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
500mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
HARHARRFP10P12
2156-RFP10P12
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RFP10P12
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 300
Einzelpreis: $1.15
Verpackung: Bulk
MinMultiplikator: 300
Verpackung: Bulk
MinMultiplikator: 300
Stellvertreter
-