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ChinaFDMS3669S
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDMS3669S
BESCHREIBUNG
MOSFET 2N-CH 30V 13A/24A 8PQFN
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc) 1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc) Surface Mount 8-PQFN (5x6)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
352
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Asymmetrical
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs
10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
2.7V @ 250µA, 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
24nC @ 10V, 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1605pF @ 15V, 2060pF @ 15V
Power - Max
1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-PQFN (5x6)
Base Product Number
FDMS3669
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSFSCFDMS3669S
2156-FDMS3669S
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Fairchild Semiconductor FDMS3669S
Dokumente und Medien
Datasheets
1(FDMS3669S Datasheet)
Menge Preis
QUANTITÄT: 352
Einzelpreis: $0.85
Verpackung: Bulk
MinMultiplikator: 352
Verpackung: Bulk
MinMultiplikator: 352
Stellvertreter
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