Mfr
Toshiba Semiconductor and Storage
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
180mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id
2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 10 V
Power Dissipation (Max)
840mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PS-8 (2.9x2.4)
Package / Case
8-SMD, Flat Lead
Base Product Number
TPCP8003