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ChinaFDS6162N7
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDS6162N7
BESCHREIBUNG
MOSFET N-CH 20V 23A 8SO
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 23A (Ta) 3W (Ta) Surface Mount 8-SO FLMP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FDS6162N7 Models
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
PowerTrench®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
23A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 23A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
5521 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO FLMP
Package / Case
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Base Product Number
FDS61
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FDS6162N7CT
FDS6162N7TR-NDR
FDS6162N7TR
FDS6162N7DKR
FDS6162N7_NLTR
FDS6162N7_NLTR-ND
FDS6162N7_NLCT
FDS6162N7_NL
FDS6162N7_NLCT-ND
FDS6162N7CT-NDR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDS6162N7
Dokumente und Medien
Datasheets
1(FDS6162N7)
Video File
1(Brushless DC Motor Control | Datasheet Preview)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 03/Dec/2009)
PCN Design/Specification
1(Mold Compound 27/March/2008)
HTML Datasheet
1(FDS6162N7)
EDA Models
1(FDS6162N7 Models)
Menge Preis
-
Stellvertreter
-