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ChinaFDP8860
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDP8860
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 8
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 80A (Tc) 254W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
239
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
222 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12240 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
254W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONSFDP8860
2156-FDP8860
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDP8860
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 239
Einzelpreis: $1.26
Verpackung: Bulk
MinMultiplikator: 239
Verpackung: Bulk
MinMultiplikator: 239
Stellvertreter
-