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ChinaFQA13N80
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TEILNUMMER DES HERSTELLERS
FQA13N80
BESCHREIBUNG
MOSFET N-CH 800V 12.6A TO3PN
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 12.6A (Tc) 300W (Tc) Through Hole TO-3PN
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQA13N80 Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
12.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
750mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
88 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
3500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PN
Package / Case
TO-3P-3, SC-65-3
Base Product Number
FQA1
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQA13N80
Dokumente und Medien
Datasheets
1(FQA13N80)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(FQA13N80)
EDA Models
1(FQA13N80 Models)
Menge Preis
-
Stellvertreter
Teil Nr. : FQA13N80-F109
Hersteller. : onsemi
Verfügbare Menge. : 76
Einzelpreis. : $5.99000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 76
Einzelpreis. : $5.99000
Ersatztyp. : Parametric Equivalent