English
Spain
Rusia
Italy
ChinaDF200R12W1H3B27BOMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
DF200R12W1H3B27BOMA1
BESCHREIBUNG
IGBT MOD 1200V 30A 375W
DETAILIERTE BESCHREIBUNG
IGBT Module 2 Independent 1200 V 30 A 375 W Chassis Mount Module
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
26 Weeks
EDACAD-MODELL
STANDARDPAKET
24
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Active
IGBT Type
-
Configuration
2 Independent
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
30 A
Power - Max
375 W
Vce(on) (Max) @ Vge, Ic
1.3V @ 15V, 30A
Current - Collector Cutoff (Max)
1 mA
Input Capacitance (Cies) @ Vce
2 nF @ 25 V
Input
Standard
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 150°C
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
DF200R12
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
448-DF200R12W1H3B27BOMA1
DF200R12W1H3B27BOMA1-ND
SP001056182
DF200R12W1H3_B27
DF200R12W1H3_B27-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies DF200R12W1H3B27BOMA1
Dokumente und Medien
Datasheets
1(DF200R12W1H3_B27)
Environmental Information
1(RoHS Certificate)
HTML Datasheet
1(DF200R12W1H3_B27)
Menge Preis
QUANTITÄT: 24
Einzelpreis: $63.47125
Verpackung: Tray
MinMultiplikator: 24
Verpackung: Tray
MinMultiplikator: 24
Stellvertreter
-