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ChinaGT60N321(Q)
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TEILNUMMER DES HERSTELLERS
GT60N321(Q)
BESCHREIBUNG
IGBT 1000V 60A 170W TO3P LH
DETAILIERTE BESCHREIBUNG
IGBT 1000 V 60 A 170 W Through Hole TO-3P(LH)
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
GT60N321(Q) Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
1000 V
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
120 A
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 60A
Power - Max
170 W
Switching Energy
-
Input Type
Standard
Td (on/off) @ 25°C
330ns/700ns
Test Condition
-
Reverse Recovery Time (trr)
2.5 µs
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3PL
Supplier Device Package
TO-3P(LH)
Base Product Number
GT60N321
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Toshiba Semiconductor and Storage GT60N321(Q)
Dokumente und Medien
PCN Obsolescence/ EOL
1(EOL 08/Nov/2013)
EDA Models
1(GT60N321(Q) Models)
Menge Preis
-
Stellvertreter
-