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ChinaAIMW120R035M1HXKSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
AIMW120R035M1HXKSA1
BESCHREIBUNG
1200V COOLSIC MOSFET PG-TO247-3
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3-41
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
39 Weeks
EDACAD-MODELL
AIMW120R035M1HXKSA1 Models
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolSiC™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
46mOhm @ 25A, 18V
Vgs(th) (Max) @ Id
5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
2130 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
228W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3-41
Package / Case
TO-247-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
448-AIMW120R035M1HXKSA1
SP005417579
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies AIMW120R035M1HXKSA1
Dokumente und Medien
Datasheets
1(AIMW120R035M1H)
Environmental Information
1(RoHS Certificate)
EDA Models
1(AIMW120R035M1HXKSA1 Models)
Menge Preis
QUANTITÄT: 120
Einzelpreis: $27.49542
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $29.32833
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $35.38
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-