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ChinaBSF024N03LT3G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSF024N03LT3G
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 15A (Ta), 106A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount MG-WDSON-2
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
547
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™3
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta), 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MG-WDSON-2
Package / Case
DirectFET™ Isometric MX
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-BSF024N03LT3G
IFEINFBSF024N03LT3G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSF024N03LT3G
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 547
Einzelpreis: $0.55
Verpackung: Bulk
MinMultiplikator: 547
Verpackung: Bulk
MinMultiplikator: 547
Stellvertreter
-