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ChinaIRF7379PBF
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TEILNUMMER DES HERSTELLERS
IRF7379PBF
BESCHREIBUNG
MOSFET N/P-CH 30V 5.8A/4.3A 8SO
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 5.8A, 4.3A 2.5W Surface Mount 8-SO
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
95
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
5.8A, 4.3A
Rds On (Max) @ Id, Vgs
45mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
520pF @ 25V
Power - Max
2.5W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Base Product Number
IRF737
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
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/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies IRF7379PBF
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