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ChinaNSS35200CF8T1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NSS35200CF8T1G
BESCHREIBUNG
TRANS PNP 35V 2A CHIPFET
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 35 V 2 A 100MHz 635 mW Surface Mount ChipFET™
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
35 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 20mA, 2A
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1.5A, 2V
Power - Max
635 mW
Frequency - Transition
100MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
ChipFET™
Base Product Number
NSS35200
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2832-NSS35200CF8T1GTR
NSS35200CF8T1G-ND
NSS35200CF8T1GOSTR
ONSONSNSS35200CF8T1G
2156-NSS35200CF8T1G-OS
NSS35200CF8T1GOSDKR
NSS35200CF8T1GOSCT
2832-NSS35200CF8T1G-488
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi NSS35200CF8T1G
Dokumente und Medien
Datasheets
1(NSS35200CF8T1G)
Product Training Modules
1(Low Vce(sat) BJT Power Savings)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2023)
PCN Design/Specification
1(Copper Wire 20/Jul/2010)
HTML Datasheet
1(NSS35200CF8T1G)
Menge Preis
-
Stellvertreter
-