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ChinaSTW35N60M2-EP
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STW35N60M2-EP
BESCHREIBUNG
MOSFET N-CH 600V TO247
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 26A (Tc) Through Hole TO-247
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
MDmesh™ M2-EP
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
STW35N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STW35N60M2-EP
Dokumente und Medien
PCN Obsolescence/ EOL
1(Mult Dev OBS 3/Jul/2020)
Menge Preis
-
Stellvertreter
-