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China2SC3143-4-TB-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SC3143-4-TB-E
BESCHREIBUNG
TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 160 V 80 mA 150MHz 200 mW Surface Mount 3-CP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
833
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
80 mA
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
700mV @ 3mA, 30mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
90 @ 10mA, 5V
Power - Max
200 mW
Frequency - Transition
150MHz
Operating Temperature
125°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
3-CP
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
ONSONS2SC3143-4-TB-E
2156-2SC3143-4-TB-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC3143-4-TB-E
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 833
Einzelpreis: $0.36
Verpackung: Bulk
MinMultiplikator: 833
Verpackung: Bulk
MinMultiplikator: 833
Stellvertreter
-