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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPA80R1K4CEXKSA1
BESCHREIBUNG
MOSFET N-CH 800V 2.8A TO220
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 2.8A (Tc) 31W (Tc) Through Hole PG-TO220-FP
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™ CE
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id
3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
570 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
31W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-FP
Package / Case
TO-220-3 Full Pack
Base Product Number
IPA80R
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IPA80R1K4CEXKSA1-IT
IFEINFIPA80R1K4CEXKSA1
SP001271052
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPA80R1K4CEXKSA1
Dokumente und Medien
Datasheets
1(IPA80R1K4CE)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPA80R1K4CE)
Menge Preis
-
Stellvertreter
Teil Nr. : IPA80R1K4CEXKSA2
Hersteller. : Infineon Technologies
Verfügbare Menge. : 485
Einzelpreis. : $1.61000
Ersatztyp. : Direct
Verfügbare Menge. : 485
Einzelpreis. : $1.61000
Ersatztyp. : Direct