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ChinaIPP80N06S2H5AKSA2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPP80N06S2H5AKSA2
BESCHREIBUNG
MOSFET N-CH 55V 80A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs
155 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Base Product Number
IPP80N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IFEINFIPP80N06S2H5AKSA2
2156-IPP80N06S2H5AKSA2
SP001063646
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP80N06S2H5AKSA2
Dokumente und Medien
Datasheets
1(IPx80N06S2-H5)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Mult Dev EOL 9/Sep/2019)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
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