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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PMWD19UN,518
BESCHREIBUNG
MOSFET 2N-CH 30V 5.6A 8TSSOP
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 5.6A 2.3W Surface Mount 8-TSSOP
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
5.6A
Rds On (Max) @ Id, Vgs
23mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs
28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
1478pF @ 10V
Power - Max
2.3W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package
8-TSSOP
Base Product Number
PMWD19
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
934057598518
568-2361-6
PMWD19UN518
PMWD19UN /T3
568-2361-1
568-2361-2
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/NXP USA Inc. PMWD19UN,518
Dokumente und Medien
Datasheets
1(PMWD19UN)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PMWD19UN)
Menge Preis
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Stellvertreter
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