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ChinaRFD16N05
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RFD16N05
BESCHREIBUNG
MOSFET N-CH 50V 16A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 50 V 16A (Tc) 72W (Tc) Through Hole IPAK
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
300
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
47mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
72W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-RFD16N05-HC
HARHARRFD16N05
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RFD16N05
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 300
Einzelpreis: $1
Verpackung: Tube
MinMultiplikator: 300
Verpackung: Tube
MinMultiplikator: 300
Stellvertreter
-