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ChinaFQB19N10LTM
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQB19N10LTM
BESCHREIBUNG
MOSFET N-CH 100V 19A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 19A (Tc) 3.75W (Ta), 75W (Tc) Surface Mount TO-263 (D2PAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
503
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
100mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.75W (Ta), 75W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQB19N10LTM
FAIFSCFQB19N10LTM
2156-FQB19N10LTM-FSTR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQB19N10LTM
Dokumente und Medien
Datasheets
1(FQB19N10LTM)
Menge Preis
QUANTITÄT: 503
Einzelpreis: $0.6
Verpackung: Bulk
MinMultiplikator: 503
Verpackung: Bulk
MinMultiplikator: 503
Stellvertreter
-