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ChinaAPT50GP60B2DQ2G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APT50GP60B2DQ2G
BESCHREIBUNG
IGBT 600V 150A 625W TMAX
DETAILIERTE BESCHREIBUNG
IGBT PT 600 V 150 A 625 W Through Hole
HERSTELLER
Microchip Technology
STANDARD LEADTIME
43 Weeks
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
POWER MOS 7®
Package
Tube
Product Status
Active
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
150 A
Current - Collector Pulsed (Icm)
190 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 50A
Power - Max
625 W
Switching Energy
465µJ (on), 635µJ (off)
Input Type
Standard
Gate Charge
165 nC
Td (on/off) @ 25°C
19ns/85ns
Test Condition
400V, 50A, 4.3Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Base Product Number
APT50GP60
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
APT50GP60B2DQ2GMI-ND
APT50GP60B2DQ2GMI
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Microchip Technology APT50GP60B2DQ2G
Dokumente und Medien
Datasheets
1(APT50GP60B2DQ2(G))
Environmental Information
()
PCN Assembly/Origin
1(Wafer Fabrication Site 27/Oct/2021)
HTML Datasheet
1(APT50GP60B2DQ2(G))
Product Drawings
1(T-MAX Front)
Menge Preis
QUANTITÄT: 40
Einzelpreis: $14.41
Verpackung: Tube
MinMultiplikator: 40
Verpackung: Tube
MinMultiplikator: 40
Stellvertreter
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