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ChinaMSCSM120TAM11CTPAG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
MSCSM120TAM11CTPAG
BESCHREIBUNG
SIC 6N-CH 1200V 251A SP6-P
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 251A (Tc) 1.042kW (Tc) Chassis Mount SP6-P
HERSTELLER
Microchip Technology
STANDARD LEADTIME
37 Weeks
EDACAD-MODELL
MSCSM120TAM11CTPAG Models
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
-
Package
Tube
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
251A (Tc)
Rds On (Max) @ Id, Vgs
10.4mOhm @ 120A, 20V
Vgs(th) (Max) @ Id
2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
696nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
9060pF @ 1000V
Power - Max
1.042kW (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
SP6-P
Base Product Number
MSCSM120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microchip Technology MSCSM120TAM11CTPAG
Dokumente und Medien
Datasheets
1(MSCSM120TAM11CTPAG)
Environmental Information
()
Featured Product
1(Microchip Technology - Silicon Carbide Semiconductor Discrete Products)
PCN Assembly/Origin
1(Assembly Site 16/Jan/2023)
EDA Models
1(MSCSM120TAM11CTPAG Models)
Menge Preis
QUANTITÄT: 1
Einzelpreis: $1076.72
Verpackung: Tube
MinMultiplikator: 1
Verpackung: Tube
MinMultiplikator: 1
Stellvertreter
-