Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IRF6810STRPBF
BESCHREIBUNG
MOSFET N CH 25V 16A S1
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 16A (Ta), 50A (Tc) 2.1W (Ta), 20W (Tc) Surface Mount DirectFET™ Isometric S1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,800

Technische Daten

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
16A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5.2mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1038 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 20W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DirectFET™ Isometric S1
Package / Case
DirectFET™ Isometric S1

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

IRF6810STRPBFCT
IRF6810STRPBFDKR
SP001530834
IRF6810STRPBF-ND
IRF6810STRPBFTR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6810STRPBF

Dokumente und Medien

Datasheets
1(IRF6810STR (1) PBF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
()
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRF6810STR (1) PBF)
Simulation Models
1(IRF6810STRPBF Saber Model)

Menge Preis

-

Stellvertreter

Teil Nr. : IRLR3636TRPBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 31,579
Einzelpreis. : $1.89000
Ersatztyp. : Similar