English
Spain
Rusia
Italy
ChinaFCP11N60N
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FCP11N60N
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 1
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 10.8A (Tc) 94W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
173
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
SupreMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
299mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35.6 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1505 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-FCP11N60N
FAIFSCFCP11N60N
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FCP11N60N
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 173
Einzelpreis: $1.74
Verpackung: Bulk
MinMultiplikator: 173
Verpackung: Bulk
MinMultiplikator: 173
Stellvertreter
-