English
Spain
Rusia
Italy
ChinaIRFI820G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFI820G
BESCHREIBUNG
MOSFET N-CH 500V 2.1A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 2.1A (Tc) 30W (Tc) Through Hole TO-220-3
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
360 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3 Full Pack, Isolated Tab
Base Product Number
IRFI820
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFI820G
Dokumente und Medien
Datasheets
1(IRFI820G)
HTML Datasheet
1(IRFI820G)
Product Drawings
()
Menge Preis
-
Stellvertreter
-