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ChinaIXFA3N120-TRL
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXFA3N120-TRL
BESCHREIBUNG
MOSFET N-CH 1200V 3A TO263
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 3A (Tc) 200W (Tc) Surface Mount TO-263AA (IXFA)
HERSTELLER
IXYS
STANDARD LEADTIME
57 Weeks
EDACAD-MODELL
STANDARDPAKET
800
Lagerbestände
Technische Daten
Mfr
IXYS
Series
HiPerFET™
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1050 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
200W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263AA (IXFA)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IXFA3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
IXFA3N120-TRLCT
IXFA3N120TRLCT-ND
IXFA3N120-TRLTR
IXFA3N120TRL
IXFA3N120TRLTR-ND
IXFA3N120TRLTR
IXFA3N120-TRLDKR
IXFA3N120TRLCT
IXFA3N120TRLDKR
IXFA3N120TRLDKR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFA3N120-TRL
Dokumente und Medien
Datasheets
1(IXFA3N120, IXFP3N120)
Environmental Information
1(Ixys IC REACH)
HTML Datasheet
1(IXFA3N120, IXFP3N120)
Menge Preis
QUANTITÄT: 1600
Einzelpreis: $5.42059
Verpackung: Tape & Reel (TR)
MinMultiplikator: 800
Verpackung: Tape & Reel (TR)
MinMultiplikator: 800
QUANTITÄT: 800
Einzelpreis: $6.02289
Verpackung: Tape & Reel (TR)
MinMultiplikator: 800
Verpackung: Tape & Reel (TR)
MinMultiplikator: 800
Stellvertreter
-