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ChinaIRF7603TRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF7603TRPBF
BESCHREIBUNG
MOSFET N-CH 30V 5.6A MICRO8
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 5.6A (Ta) 1.8W (Ta) Surface Mount Micro8™
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
5.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
35mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
520 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Micro8™
Package / Case
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRF7603TRPBFCT
IRF7603TRPBFDKR
SP001566334
IRF7603TRPBF-ND
IRF7603TRPBFTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7603TRPBF
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