Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SCS302APC9
BESCHREIBUNG
DIODE SILICON CARBIDE 650V 2A
DETAILIERTE BESCHREIBUNG
Diode 650 V 2A Through Hole
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
2A
Voltage - Forward (Vf) (Max) @ If
1.5 V @ 2 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
10.8 µA @ 650 V
Capacitance @ Vr, F
110pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Operating Temperature - Junction
175°C (Max)
Base Product Number
SCS302

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Rohm Semiconductor SCS302APC9

Dokumente und Medien

Datasheets
()
Other Related Documents
()
Product Training Modules
1(Silicon Carbide (SiC) Barrier Diodes)
Environmental Information
()
Featured Product
1(SiC Schottky Barrier Diodes)
HTML Datasheet
1(TO-220ACP Taping Spec)
Simulation Models
1(SCS302AP Spice Model)
Reliability Documents
1(SBD-THD Reliability Test)

Menge Preis

-

Stellvertreter

Teil Nr. : SCS302AHGC9
Hersteller. : Rohm Semiconductor
Verfügbare Menge. : 665
Einzelpreis. : $2.16000
Ersatztyp. : Parametric Equivalent